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| AP9962M Advanced Power Electronics Corp. D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low On-resistance Single Drive Requirement Surface Mount Package D1 D1 BVDSS RDS(ON) G2 40V 25m 7A SO-8 S1 G1 S2 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 40 20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200407031 AP9962M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.1 11 25.8 4.4 9.1 10.6 6.8 26.3 12 1165 205 142 Max. Units 25 40 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= 20V ID=7A VDS=32V VGS=4.5V VDS=20V ID=1A RG=5.7,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V Is=1.7A, VGS=0V, dI/dt=100A/s Min. - Typ. 21.2 16 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP9962M 25 25 T C =25 C 20 o 10V 8.0V 20 T C =150 C o 10V 8.0V 5.0V 5.0V ID , Drain Current (A) 4.0V 15 ID , Drain Current (A) 4.0V 15 10 10 V G =3.0V 5 5 V G =3.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 1.8 ID=7A T C =25 o C 30 1.6 I D =7A VG=10V Normalized RDS(ON) 1.4 RDS(ON) (m ) 25 1.2 1.0 20 0.8 15 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100 2.8 2.6 10 2.4 T j =150 C IS(A) 1 o T j =25 C VGS (th) o 2.2 2 1.8 1.6 0.1 1.4 1.2 0.01 0 0.4 0.8 1.2 1.6 1 -50 0 50 100 150 V SD (V) Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962M 14 10000 f=1.0MHz I D =7A 12 VGS , Gate to Source Voltage (V) V DS =20V 10 V DS =25V V DS =32V C (pF) Ciss 1000 8 6 100 4 Coss Crss 2 0 0 5 10 15 20 25 30 35 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) VDS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (R thja) 10 0.2 0.1 0.1 1ms ID (A) 1 0.05 10ms 100ms PDM 0.02 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 0.1 T c =25 o C Single Pulse 0.01 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS TO THE D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS D OSCILLOSCOPE 0.8x RATED VDS G S VGS RG + 10V - G S VGS + 1~ 3 mA IG ID Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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